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AN11062 broadband dvb-t uhf power amplifier with the blf888a rev. 1 ? 30 may 2011 application note document information info content keywords blf888a, dvb-t, uhf broadcast abstract this application note describes the design and performance of a dvb-t uhf power amplifier using the blf888a.
AN11062 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. application note rev. 1 ? 30 may 2011 2 of 20 contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com nxp semiconductors AN11062 broadband dvb-t uhf power am plifier with the blf888a revision history rev date description v.1 20110530 initial version
AN11062 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. application note rev. 1 ? 30 may 2011 3 of 20 nxp semiconductors AN11062 broadband dvb-t uhf power am plifier with the blf888a 1. introduction for the past few years, new product design in the broadcast industry has been dominated by emerging digital modulation standards. a specific example is broadcast television, where many new transmitter systems are currently being set up as part of the conversion to digital terrestrial television. the blf888a is a uhf ldmos power transisto r intended for the broadcast transmitter market. the blf888a can deliver 110 w dvb-t average power over the full uhf band from 470 mhz to 860 mhz at a ccdf of 8 db (0.01 % probability) . higher average dvb-t power (120 w average) is possible depending on required linearity and predistorter capabilities. the tran sistor is also capable of hand ling analog tv (atv) signals. the average power delivered will be de pendent on coo ling conditions. today, uhf transmitter design focuses on increasing efficiency and output power, while reducing size. to achieve these goals, the next generation of uhf transistors must deliver greater power levels, increased efficiency and higher gain, and the size of application boards needs to be reduced. the blf888a meets these requirements. the blf888a has been optimized for extreme low thermal resistance (r th(j-c) = 0.15 k/w) and improved ruggedness (> 40 : 1 at 860 mhz). this report describes a broadband application incorporating the blf888a, built on a small form factor board with a total size of 105 mm ? 50 mm. 2. circuit description the blf888a broadband applicat ion circuit is shown in figure 1 . it is a class ab common source amplifier. circuit dimensions are 105 mm ? 50 mm (including the transistor). if the connectors are excluded, the dimensions are 95 mm ? 50 mm. the pcb material is taconic rf35 ( ? r = 3.5) with a thickness of 0.76 mm.
AN11062 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. application note rev. 1 ? 30 may 2011 4 of 20 nxp semiconductors AN11062 broadband dvb-t uhf power am plifier with the blf888a a schematic diagram of the application design is shown in figure 2 . the output consists of two microstrip lines per side, l1 and l2, and a balun b1 (25 ? ). c1 to c9 are used to match the transistor impedance to the input impedance of the balun (25 ? ). the balun converts the 25 ? differential impedance to a 50 ? asymmetrical imped ance at the output. the length of the balun is approximately ? /8 at the uhf middle frequency. microstrip line l3 is connected to the differential input of the balun to improve symmetry of the impedance to ground. l5 in combination with c17 and c18 improves matching at the lower uhf frequencies. c11 and c12 influence the common mode impedance and improve the harmonic behavior. r1 and r2 were added for low frequency damping. the input also consists of two microstrip lines, l30 and l31, and a balun b2 (25 ? ). c34 and c35 are rf decoupling capacitors for the balun. the transistor gate supply is connected via an rc network consisting of resistors r3 to r6, along with c36 and c37. this rc network performs a damping function that helps improve stability. microstrip line l32 performs the same function at the in put as microstrip line l3 at the output. fig 1. blf888a broadband application circuit 019aac328
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AN11062 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. application note rev. 1 ? 30 may 2011 6 of 20 nxp semiconductors AN11062 broadband dvb-t uhf power am plifier with the blf888a 3. design and simulation 3.1 blf888a impedance and simulation data the impedance data detailed in figure 3 and figure 4 was used as a starting point in the development of the broadband circuit.this data is simulated from the equivalent circuit of the transistor. by using the equivalent circuit, impedances can be simulated from the internal drain current source and gate capacitance. the push-pull and common mode simulation results for the broadband application circuit are shown in figure 6 and figure 7 respectively. the (common mode) low impedance in the second harmonic band (940 mhz to 1720 mh z) is of particular significance in the simulation. the resonance peaks in common mode can be shifted via capacitors c11 and c12 (see figure 2 ). a high second harmoni c impedance will result in significant power and efficiency losses. 3.1.1 impedance data fig 3. input impedance f (ghz) -0.1 1.5 1.1 0.3 0.7 019aa330 3 -1 7 11 z i () -5 real imag
AN11062 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. application note rev. 1 ? 30 may 2011 7 of 20 nxp semiconductors AN11062 broadband dvb-t uhf power am plifier with the blf888a fig 4. output impedance; p o = 110 w dvb-t (total device) fig 5. definition of transistor impedance: z i = input impedance, z l = load impedance f (ghz) -0.1 1.5 1.1 0.3 0.7 019aa331 -1 3 7 z i () -5 real imag 001aan207 gate 1 gate 2 drain 2 drain 1 z i z l
AN11062 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. application note rev. 1 ? 30 may 2011 8 of 20 nxp semiconductors AN11062 broadband dvb-t uhf power am plifier with the blf888a 3.1.2 simulation data m4: 470 mhz, zp (real) = 3.197 m2: 640 mhz, zp (real) = 2.155 m5: 860 mhz, zp (real) = 2.742 m8: 470 mhz, zp (imaginary) = 0.642 m11: 640 mhz, zp (imaginary) = ?0.925 m7: 860 mhz, zp (imaginary) = ? 0.343 fig 6. internal drain impedance; one side, push-pull mode m4: 470 mhz, zp (real) = 0.070 m2: 640 mhz, zp (real) = 0.015 m5: 860 mhz, zp (real) = 0.041 m8: 470 mhz, zp (imaginary) = ? 7.314 m11: 640 mhz, zp (imaginary) = ?2.335 m7: 860 mhz, zp (imaginary) = ? 5.641 fig 7. internal drain impedance; one side, common mode f (ghz) 0.2 2.0 1.4 0.8 019aa332 0.0 2.0 -2.0 4.0 6.0 z l () -4.0 0.5 1.7 1.1 m5 m7 m4 m2 m11 m8 real r opt imag f (ghz) 0.2 2.0 1.4 0.8 019aa333 -1.0 1.0 -3.0 3.0 5.0 z l () -5.0 0.5 1.7 1.1 m5 m7 m8 m4 m2 m11 real r opt imag
AN11062 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. application note rev. 1 ? 30 may 2011 9 of 20 nxp semiconductors AN11062 broadband dvb-t uhf power am plifier with the blf888a 3.2 bias and decoupling circuit the rf amplifier is sensitive to oscillations during mismat ch. therefore special care was taken to ensure adequate low frequency clamping at both the input and at the output. two clamping resistors, r1 and r2, were added at the output for this purpose. also, the supply is connected to the balun at the output. at the input, clamping is achieved via the rc network connected to the balun. 3.3 thermal considerations the circuit is designed to deliver 110 w d vb-t average power. the transistor can also handle cw, 2-tone and analog tv signals. however the power dissipation and heat generated by the transistor and the circuit ca n be excessively high, especially with cw and analog tv signals. the maximum junction temperature of the transistor is 200 ? c. the electromagnetic (see ref. 1 ) and lifetime (20 years minimu m) restrictions must also be respected. in this circuit, power dissipation is limited by the matching capacitors c1 and c2, and the balun (p max = 150 w (average). for short-term testing, the circuit can handle cw power levels up to 450 w. 4. test results 4.1 large signal measurements the test circuit was evaluated for dvb-t (110 w to 130 w average), 2-tone (250 w average) and pulsed cw. besides the standard tests, special measurements were added with v ds variation (46 v to 50 v) and water temperature variation (20 ? cto60 ? c) the demo circuit has a soldered transistor . this gives the best rf performance. a comparison is shown between a soldered and a clamped transistor. the measurement results are shown in figure 8 to figure 13 . all measurements were taken at v dd =50 v, i dq = 1.3 a (except for the v ds variation) and t water =20 ? c (except for the t hs /t water variation). 4.1.1 dvb-t the target for the broadband circuit was to achieve average output power (p l(av) ) of 110 w with a peak-to-average power ratio (p ar) of 8 db at a ccdf of 0.01 %. this target was met over the entire frequency range from 470 mhz to 860 mhz. lead contact and capacitor positioning were extremely important in ensuring the target was met at the critical higher uhf frequencies (above 800 mhz). shoulder distance is less than ? 30 dbc and gain is greater than 20 db over the entire frequency band. drain efficiency ( ? d ) is greater than 28 % and is typi cally 30 % (at 110 w). efficiency at the less responsive frequencies can be improved by lowering the supply voltage (the margin of the par at the less responsive frequencies in terms of ? d is wide enough to allow the supply voltage to be lowered). the influence of the cooling conditio ns (liquid cooled) can be seen in figure 11 . the influence on ccdf / ?? d is marginal in the measured range of t water (20 ? cto60 ? c). gain will change by max. 1 db.
AN11062 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. application note rev. 1 ? 30 may 2011 10 of 20 nxp semiconductors AN11062 broadband dvb-t uhf power am plifier with the blf888a mounting has a significant effect on rf performance. this is shown in figure 12 . obviously best figures are achieved wit h a soldered transistor (ccdf / ?? d ). the comparison (soldered / clamped) was made wit h 2 different compounds: graphite (fischer thermal transfer compo und wlpg) and austerlitz wps-2 ( without silicone). the graphite compound is electrically conducting and gi ves slightly better thermal / rf results. (1) ccdf_110 (2) ccdf_120 (3) ccdf_130 (4) deff_130 (5) deff_120 (6) deff_110 a. ccdf 0.01 % + drain efficiency (1) gain_110 (2) gain_120 (3) gain_130 (4) shoulder_130 (5) shoulder_120 (6) shoulder_110 b. gain + shoulder distance (4.3 mhz from f c ) shoulder measured in dbc via a delta marker fig 8. blf888a large signal measurement: v ds =50 v, i dq =1.3a, t water =20 ?c (water-cooled copper heatsink) f (mhz) 400 900 800 600 700 500 019aa334 6 7 5 8 9 (db) 4 34 38 30 42 46 d (%) 26 (4) (5) (6) (1) (2) (3) f (mhz) 400 900 800 600 700 500 019aa335 16 18 14 20 22 (db) 12 -30 -26 -34 -22 -18 (db) -38 (1) (2) (3) (4) (5) (6)
AN11062 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. application note rev. 1 ? 30 may 2011 11 of 20 nxp semiconductors AN11062 broadband dvb-t uhf power am plifier with the blf888a (1) ccdf_50 (2) ccdf_48 (3) ccdf_46 (4) deff_46 (5) deff_48 (6) deff_50 a. ccdf 0.01 % + drain efficiency (1) gain_50 (2) gain_48 (3) gain_46 (4) shoulder_46 (5) shoulder_48 (6) shoulder_50 b. gain + shoulder distance (4.3 mhz from f c ) shoulder measured in dbc via a delta marker fig 9. blf888a large signal measurement: v ds =46vto50 v, i dq =1.3a, t water =20 ?c (water-cooled copper heatsink) f (mhz) 400 900 800 600 700 500 019aa336 7 6 8 9 (db) 5 34 30 38 42 d (%) 26 (4) (5) (6) (1) (2) (3) f (mhz) 400 900 800 600 700 500 019aa337 -30 -26 -34 -22 -18 (db) -38 19 21 17 23 25 (db) 15 (1) (2) (3) (4) (5) (6)
AN11062 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. application note rev. 1 ? 30 may 2011 12 of 20 nxp semiconductors AN11062 broadband dvb-t uhf power am plifier with the blf888a (1) ccdf_20 c (2) ccdf_40 c (3) ccdf_50 c (4) ccdf_60 c (5) deff_20 c (6) deff_40 c (7) deff_50 c (8) deff_60 c a. ccdf 0.01 % + drain efficiency (1) ccdf_20 c (2) ccdf_40 c (3) ccdf_50 c (4) ccdf_60 c (5) gain_20 c (6) gain_40 c (7) gain_50 c (8) gain_60 c b. gain + ccdf 0.01 % fig 10. blf888a large signal measurement: v ds =50 v, i dq =1.3a, t water =20 ? cto60 ?c (water-cooled copper heatsink) f (mhz) 400 900 800 600 700 500 019aa338 7 6 8 9 (db) 5 32 28 36 40 d (%) 24 (1) (2) (3) (4) (5) (6) (7) (8) f (mhz) 400 900 800 600 700 500 019aa339 6 7 5 8 9 (db) 4 19 21 17 23 25 (%) 15 (1) (2) (3) (4) (5) (6) (7) (8)
AN11062 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. application note rev. 1 ? 30 may 2011 13 of 20 nxp semiconductors AN11062 broadband dvb-t uhf power am plifier with the blf888a (1) ccdf_solder (2) ccdf_wps-2 (3) ccdf_graphite (4) deff_graphite (5) deff_wps-2 (6) deff_solder a. ccdf 0.01 % + drain efficiency (1) gain_solder (2) gain_graphite (3) gain_wps-2 (4) shoulder_solder (5) shoulder_graphite (6) shoulder_wps-2 b. gain + shoulder distance (4.3 mhz from f c ) shoulder measured in dbc via a delta marker fig 11. blf888a large signal measurement: v ds =50 v, i dq =1.3a, t water =20 ?c (water-cooled copper heatsink) f (mhz) 400 900 800 600 700 500 019aa340 7 6 8 9 (db) 5 32 28 36 40 d (%) 24 (4) (5) (6) (1) (2) (3) f (mhz) 400 900 800 600 700 500 019aa341 18 20 16 22 24 (db) 14 -32 -28 -36 -24 -20 (db) -40 (1) (2) (4) (5) (6) (3)
AN11062 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. application note rev. 1 ? 30 may 2011 14 of 20 nxp semiconductors AN11062 broadband dvb-t uhf power am plifier with the blf888a 4.1.2 2-tone measurements were taken at p l(av) = 250 w (average). imd3 levels are well below ? 30 dbc over the entire uhf frequency range. at these power levels, drain efficiency >40% and gain >20db. 4.1.3 pulsed pulsed measurement results between 470 mhz and 860 mhz (duty cycle = 10 %, t p =100 s) are shown in figure 13 (response at 650 mhz and 850 mhz). this provides a clear illustration of the peak po wer capability of transistor pl us circuit. the lowest peak power level ( ? 600 w) occurs at 860 mhz (due to the longer pulse duration, this is lower than the peak power with dvb-t). 2-tone, gain and drain efficiency (1) efficiency (2) gain (3) imd3max fig 12. blf888a large signal measurement: 2-tone broadband measurement at different p l(av) levels (250 w); v ds = 50 v, i dq =1.3a,t water =20 ? c (water-cooled heatsink); ? f = 100 khz, 2 carriers with equal amplitude f (mhz) 400 900 800 600 700 500 019aa342 13 17 9 21 25 gp (db) 5 -10 10 -30 30 50 d (%) -50 (2) (1) (3)
AN11062 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. application note rev. 1 ? 30 may 2011 15 of 20 nxp semiconductors AN11062 broadband dvb-t uhf power am plifier with the blf888a 5. conclusion the blf888a broadband application circuit presented in this report fulfils the following requirements: ? p l(av) dvb-t > 110 w ? efficiency > 28 % (typ. 30 %) ? shoulder distance < ? 30 dbc (typ. ? 33 dbc) ? gain > 20 db (typ. 21 db) the circuit was designed for 110 w average d vb-t. the blf888a is capable of delivering higher average power levels (e.g. in an atv application). in such applications, special care must be taken to ensure adequate cooling is provided for the transistor and the circuit will need some redesign to handle the higher average power le vels (e.g. the balun size). the transistor has an extremely low r th (0.15 k/w) which guarantees low junction temperatures and high re liability. it also enables the us e of analog modulated tv signals. critical aspects of this broadband design include the harmonic loading (especially the 2nd harmonic of frequencies below 500 mhz), lead contact ( an 'air gap' will shift the impedance level significantly) and low frequency stability (sev eral damping resistors were added). gain + drain efficiency, t p =100 ? s (pulse duration), ? = 10 % (duty cycle), t = 1 ms (period) v ds = 50 v, i dq =1.3a,t water =20 ? c (water-cooled heatsink) (1) power added efficiency 650 mhz (2) power added efficiency 860 mhz (3) gain 650 mhz (4) gain 860 mhz fig 13. blf888a large signal measurement: pulsed cw broadband measurement ppeak (w) 0 800 600 400 200 019aa343 17.5 19.5 21.5 gain (db) 15.5 20 40 60 (%) 0 (1) (2) (3)(4)
AN11062 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. application note rev. 1 ? 30 may 2011 16 of 20 nxp semiconductors AN11062 broadband dvb-t uhf power am plifier with the blf888a the transistor has an excellent ruggedne ss, with measured vswr at 860 mhz > 40:1. other frequencies show at least a vswr >10:1. 6. appendix a: pcb layout and bill of materials see table 1 for a list of components. all dimensions in mm; pcb input = 35 mm ? 50 mm, pcb output = 60 mm ? 50 mm, m2 holes fig 14. dimensions of blf888a broadband application circuit 019aac344 l33 l32 l32 105 mm 50 mm l31 l30 l30 l1 l5 l5 l1 l2 l2 l3 l3 l4 l31 fig 15. component layout of blf888a broadband application circuit 019aac345 r3 r5 +v g1 +v d1 +v d2 +v g2 r7 r1 c19 c17 c18 6.3 mm c20 c24 r2 c34 c36 c37 c32 c31 c5 c6 c11 c22 c21 c23 c7 c13 c8 c14 c15 c16 c12 c9 c8 c1 c2 c3 c4 r8 c30 c33 50 50 36.8 mm 49.6 mm 4 mm 26.3 mm 25.3 mm c35 r4 - - + + r6 44 mm
AN11062 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. application note rev. 1 ? 30 may 2011 17 of 20 nxp semiconductors AN11062 broadband dvb-t uhf power am plifier with the blf888a table 1. parts list for blf888a broadband application circuit component value type comment output c1 12 pf atc180r c2, c3, c4, c5, c6 8.2 pf atc180r c7 6.8 pf atc100b c8 2.7 pf atc180r c9 2.2 pf atc100b c10, c13, c14 100 pf atc180r c11, c12 10 pf atc100b c17, c18, c23, c24 100 pf atc180b c15, c16 4.7 ? f tdk c4532x7r1e475mt020u 50 v c19, c20 10 ? f tdk c570x7r1h106kt000n 50 v c21, c22 470 ? f electrolytic capacitor 63 v r1, r2 10 ? l1 15 mm ? 13 mm microstrip line length ? width l2 26 mm ? 5 mm microstrip line length ? width l3 49.5 mm ? 2 mm microstrip line length ? width l4 3.5 mm ? 1.7 mm microstrip line length ? width l5 9.5 mm ? 2 mm microstrip line length ? width balun b1 semi-rigid coax z o =25 ? ; 49.5 mm ut-090c-25 (ez 90-25) pcb taconic rf35, ? r =3.5 height = 0.76 mm; 50 mm ? 60 mm cu plating 35 ? m input c30 10 pf atc100a c31 9.1 pf atc100a c32 3.9 pf atc100a c33, c34, c35 100 pf atc100a c36, c37 4.7 ? f tdk c4532x7r1e475mt020u r3, r4 5.6 ? r5, r6 100 ? r7, r8 1 k ? potentiometer l30 13 mm ? 5 mm microstrip line length ? width l31 11 mm ? 2 mm microstrip line length ? width l32 49.5 mm ? 2 mm microstrip line length ? width l33 3 mm ? 2 mm microstrip line length ? width balun b2 semi-rigid coax z o =25 ? ; 49.5 mm ut-090c-25 (ez 90-25)
AN11062 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. application note rev. 1 ? 30 may 2011 18 of 20 nxp semiconductors AN11062 broadband dvb-t uhf power am plifier with the blf888a 7. abbreviations 8. references [1] blf888a data sheet pcb taconic rf35, ? r =3.5 h = 0.76 mm; 35 mm ? 50 mm cu plating 35 ? m table 1. parts list for blf888a broadband application circuit ?continued component value type comment table 2. abbreviations acronym description ccdf complementary cumulative distribution function dvb digital video broadcast dvb-t digital video broadcast - terrestrial uhf ultra high frequency cw continuous wave imd3 third-order intermodulation distortion pep peak envelope power
AN11062 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. application note rev. 1 ? 30 may 2011 19 of 20 nxp semiconductors AN11062 broadband dvb-t uhf power am plifier with the blf888a 9. legal information 9.1 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. 9.2 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in su ch equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customer?s sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as fo r the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applic ations and products using nxp semiconductors products in order to av oid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. export control ? this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from national authorities. 9.3 licenses 9.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. ics with dvb-t or dvb-t2 functionality use of this product in any manner that complies with the dvb-t or the dvb-t2 standard may require licenses under applicable patents of the dvb-t respectively the dvb-t2 patent portfolio, which license is available from sisvel s.p.a., via sestriere 100, 10060 none (to), italy, and under applicable patents of other parties.
nxp semiconductors AN11062 broadband dvb-t uhf power am plifier with the blf888a ? nxp b.v. 2011. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 30 may 2011 document identifier: AN11062 please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 10. contents 1 introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 circuit description . . . . . . . . . . . . . . . . . . . . . . . 3 3 design and simulation . . . . . . . . . . . . . . . . . . . 6 3.1 blf888a impedance and simulation data . . . . 6 3.1.1 impedance data . . . . . . . . . . . . . . . . . . . . . . . . 6 3.1.2 simulation data . . . . . . . . . . . . . . . . . . . . . . . . . 8 3.2 bias and decoupling circuit . . . . . . . . . . . . . . . . 9 3.3 thermal considerations . . . . . . . . . . . . . . . . . . 9 4 test results . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.1 large signal measurements . . . . . . . . . . . . . . . 9 4.1.1 dvb-t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.1.2 2-tone . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 4.1.3 pulsed. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 5 conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6 appendix a: pcb layout and bill of materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 7 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 18 8 references . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 9 legal information. . . . . . . . . . . . . . . . . . . . . . . 19 9.1 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 9.2 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 9.3 licenses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 9.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 19 10 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

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